Abstract
(1− x) Pb[Yb 1/2Nb 1/2]O 3 − x PbTiO 3 (PYbN-PT, x=0.4 and 0.5) / SrRuO 3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉 pc-oriented LaAlO 3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subcell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉 pc orientation and an in-plane heteroepitaxial arrangement of [110] pc PYbN-PT // [110] pc. SrRuO 3. When processed in the 560–660°C temperature range, with a dynamic O 3/O 2 pressure of 300–400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent ( P r) and saturation ( P s) polarizations increase up to 50 and 80 μC/cm 2, respectively.
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