Abstract
An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO2/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
