Abstract
Chromeless Phase Lithography (CPL) is one of the promising RETs for low K<sub>1</sub> optical lithography. However, there are remained issues in CPL mask manufacturing, such as phase defect, which can be generated during quartz dry etching process. In CPL mask technology, the traditional defect printability specification is no longer adequate. This paper investigates to understand the tolerance of the CPL in view of phase defect specification. We studied to find out specifications for phase defect in CPL mask. Three-dimensional topography is used in the phase defect simulation. Based on the simulation results, programmed defect mask is made to evaluate phase defect printability by measuring aerial images with AIMS. Also the inspection sensitivity for quartz phase defect was evaluated with current inspection tool.
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