Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing

Abstract

AbstractArtificial synapses, such as ferroelectric field‐effect transistors, aspire the brain‐like computation in real life and are likely to replace conventional computing methods in the future. Amorphous SiZnSnO (a‐SZTO)‐based ferroelectric field‐effect transistor is fabricated using the organic poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐TrFE) ferroelectric gate insulating layer. First, the ferroelectric properties of P(VDF‐TrFE) are analyzed depending on the crystallization temperature for artificial synaptic transistor applications. The ferroelectricity becomes prominent with the evolution of the β‐phase till 140 °C and degrades thereafter. The a‐SZTO‐based ferroelectric field‐effect transistors employing P(VDF‐TrFE) show anticlockwise hysteresis, typical for a ferroelectric field‐effect transistor. The nonlinearity for the potentiation and depression and the dynamic range is confirmed to be increased with higher β‐phase concentration. The rise in the concentration is related to the elevated thermodynamic stability of the β‐phase between curie temperature and the melting point. Utilizing the parameters obtained from the a‐SZTO‐P(VDF‐TrFE) synaptic transistor, the simulation studies exhibit a high recognition rate of 86.8%, which makes it a promising candidate for artificial intelligence applications.