Phase control of the fractional conductance of silicon nanosandwich-structures

Abstract

We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide that are confined by delta-barrier heavily doped with boron, which create the edge channels used as the phase controllers of electric signals. The formation of the negative-U dipole boron centers, which appear to confine the edge channels, results in the effective mass dropping and corresponding reduction of the electron-electron interaction thereby giving rise to the macroscopic quantum phenomena at high temperatures up to room temperature. The phase control of the longitudinal conductance is observed by changing either the magnitude of the source-drain current or the voltage applied to the external gate of the silicon nanosandwiches within the quantum Faraday effect.