Abstract
In this paper, phase control of optical bistability and multistability based biexciton coherence is investigated in GaAs/AlxGal−xAs semiconductor structure with 15 periods of 17.5nm GaAs layer and 25-nm Al0.3Ga0.7 barriers, grown by molecular beam epitaxy, four-level quantum dot nanostructure. By two control fields that couple to a biexciton state, the destructive interference can be obtained. In this case, the optical bistability (OB) and optical multistability (OM) can be dramatically altered with adjusting the absorption of two weak probe and signal fields. The results show that the OB and OM behavior of the medium are different for two-weak-pulsed probe fields due to effect of exciton spin relaxation, intensity of coupling fields and relative phase between applied fields.
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