Phase Change Memory Modeling: From Chalcogenide Physics to Device Scaling

Abstract

Phase change memory (PCM) based on the electrically-induced phase transition in chalcogenide materials is an emerging device capable of fast switching and nonvolatile storage, thus potentially allowing to meet both the specifications of DRAM and Flash devices. To develop fast and scalable PCMs, the conduction and reliability physics must be carefully understood and physically-accurate models must be identified. In this work, recent advances about the physical modeling of PCM devices will be reviewed. The electrical transport mechanisms, needed to predict the scaling dependence of resistance window, will be described. The scaling trend of reset current will be discussed with reference to the existing cell architectures (i.e. mushroom, pore and line cells).