Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy

Abstract

The non-ideality aspects of phase change memory (PCM) such as drift and resistance variability can pose significant obstacles in neuromorphic hardware implementations. A unique drift and variability compensation strategy is demonstrated and implemented in an FD-SOI SNN hardware unit composed of embedded phase change memories (ePCMs), current attenuators, and spiking neurons. The effect of drift and variability compensation on inference accuracy is tested on the MNIST dataset to show that our drift and variability mitigation strategy is effective in sustaining its accuracy over time. The variability is reduced by up to 5% while the drift coefficient is reduced by up to 57.8%. The drift is compensated and the SNN classification accuracy is sustained for up to 2 years with intrinsic control-free hardware that tracks the ePCM current over time and consumes less than 30 µW. The results are based on ePCM chip experimental data and pos-layout simulation of a test chip comprising the proposed circuit solution.