Abstract
GeTe/Sb2Te3 nanocomposite multilayer films were deposited by RF magnetron sputtering on SiO2/Si(100) substrates. The temperature dependence of the sheet resistance of multilayer films with various thickness ratios of GeTe to Sb2Te3 was investigated and compared with that of Ge2Sb2Te5. In situ resistance measurements were employed to follow the phase-change process. The crystallization temperature and activation energy for the crystallization of multilayer films increased with the thickness ratio of GeTe to Sb2Te3 within the materials. The multilayer films possessed the merits of high thermal stability and high crystallization speed. The failure time for GeTe/Sb2Te3 nanocomposite multilayer films was longer than that for Ge2Sb2Te5 at 110 °C. We conclude that GeTe/Sb2Te3 nanocomposite multilayer films are good candidates for phase-change random-access memory (PCRAM) applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
