Abstract
The phase change behavior of pure ZnTe and pseudo-binary ZnTe-ZnSb material has been investigated systemically in terms of the electrical, thermal and optical properties. The results show that ZnTe is a composition with fast continuous crystallization, wide optical band gap and large crystalline resistance but thermally unstable and poor phase-switching ability. The pseudo-binary ZnTe-ZnSb material inherits the characteristics of fast crystallization and wide optical band gap from ZnTe and good thermal stability from ZnSb, respectively, and even shows better phase change properties with higher crystallization temperature and larger crystalline resistance. From these results, we conclude that ZnTe-ZnSb can be one of the most promising materials for phase change memory application.
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