Abstract
We have experimentally studied metal-insulator transitions in a two-dimensional electron system in Si-MOSFET's in a magnetic field and derived a phase diagram on a ν (Landau level filling factor) vs. disorder (resistivity in the absence of magnetic field) plane. Structures of stabilized phase boundaries at ν=1 and ν=2 are discussed based on many-body enhancement of valley- and Zeeman-splitting, respectively.
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