Abstract
Using a back gate technique we have studied weak localization magnetoresistance in a GaAs/AlGaAs heterostructure with one or two subbands of two dimensional electron gas systems (2DEG). The spin-orbit antilocalization for a single 2DEG cannot be influenced by a magnetic field and only the component perpendicular to the 2DEG can be determined as a constant addendum to the phase relaxation rate. When 2 subbands become populated at high electron concentrations, the phase relaxation rate is enhanced and the spin-orbit relaxation in the plane of the 2DEG can be detected because of the quasi-2-dimensional situation.
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