Abstract

Diffusion joints were formed between Ti3SiC2 and equiatomic NiTi at different temperatures. Homogeneous diffusion bonding was observed at 1100 and 1200 °C, while no bonding was evident at 1000 °C and the samples were completely reacted at 1300 °C. Si diffusion from Ti3SiC2 into NiTi was the main mechanism responsible for the phase and morphology evolution at the interface. In contrast to the 1100 °C experiments, the liquid-phase diffusion at 1200 °C significantly increased the Si diffusion, and changed the phase morphology.

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