Phase- and Angle-Sensitive Terahertz Hot-Electron Bolometric Plasmonic Detectors Based on Fets with Graphene Channel and Composite H-BN/Black-P/H-BN Gate Layer

Abstract

In this paper, we propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence.