Abstract
Fabrication and characterization of capacitive pH sensor based on Electrolyte/Insulator/Semiconductor (EIS) structure has been investigated. EIS structure has been fabricated by trapping CdSe/ZnS quantum dots in the chaperonin protein layer deposited on SiO2 surface. Random distribution of CdSe/ZnS quantum dots having very small diameter ~4nm characterized by atomic force microscope. Electrochemical characterization shows that improvement in pH response with sensitivity of 53.3mV/pH (~99% linearity) has been observed with CdSe/ZnS Quantum Dots modified EIS structure as compare to bare SiO2 EIS structure with pH response of 35mV/pH (~98% linearity). CdSe/ZnS modified pH sensor has good stability and repeatability concluded from the concap Vfb measurement. High surface area of the CdSe/ZnS quantum dots can be utilized for the immobilization of biomolecules and biosensor applications in future.
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