Abstract
A high dielectric constant capacitor with stacked oxide prepared by anodic oxidation in pure water is reported in this study. The transmission electron microscopy results indicate that good uniform interfaces are observed. The relative dielectric constant of the anodic oxides is determined to have a value of about 12 by capacitance-voltage measurement. High breakdown property and left-shift curves are exhibited. This anodic oxidation stacked capacitor, which is used as a pH-sensitive element in the structure of an electrolyte insulator semiconductor (EIS), is investigated. A large shift of the flatband voltage is obtained when the double-layered EIS structures are immersed in various (, 4, 6, 8, and 10) buffer solutions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
