Abstract
Highly sensitive and stable pH‐sensing properties of an extended‐gate field‐effect transistor (EGFET) based on the aluminum‐doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal‐oxide‐semiconductor field‐effect transistor (MOSFET). Afterwards, the current‐voltage (I-V) characteristics and the sensing properties of the pH‐EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH‐sensing characteristics of AZO nanostructured pH‐EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.
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