Abstract
The etching characteristics of pH-controlled tetramethyl ammonium hydroxide (TMAH) by dissolving silicon or acid have been studied. 10 and 22 wt.% TMAH at 80°C are used as etchants, and (NH 4) 2CO 3 and (NH 4)HPO 4 are used as acids. The etching rates of silicon and aluminum, the etched surface roughness, the pH and the conductivity are measured. The pH and conductivity values required to realize aluminum etching rates of lower than 0.1 μm min −1 are determined to be 11.5 and 60 mS cm −1 for 22 wt.% TMAH, and 11.5 and 100 mS cm −1 for 10 wt.% TMAH. Etched surface roughness of less than 5 μm and a silicon (100) etching rate of more than 0.7 μm min −1 are realized at these pH values. By adding acid to control the pH value of the TMAH, the same dependencies of aluminum etching rate on the pH value are observed.
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