Abstract
An evaluation technique for microelectromechanical systems (MEMS) accelerometer properties that uses the finite element method (FEM) analysis was improved by considering the residual thermal stress of thin films. By simulating beam buckling, a mechanism was verified by which the thermal stress of a silicon dioxide film on the beam due to cooling after annealing generates axial compression stress in the beam. The effects of the residual thermal stress on accelerometer properties were investigated. A FEM analysis result of the sensitivity ratio between the x and z axes agreed with the measured value after a thermal stress analysis with temperature change of 740℃ was added, compared with a result without thermal stress consideration that had a 22% difference.
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