Abstract

AbstractThe perturbed angular correlation (PAC) method was used to study vacancy trapping at 111In atoms in quenched Al single crystals containing up to 10 ppm In. During annealing from 200–230 K, two different electric field gradients appeared, characterized by the interaction frequencies ν 01 = 67 MHz with asymmetry parameter η = 0.41, and νQ2 = 133 MHz with η = 0. The assignment of ν01 to a single vacancy-In atom pair is discussed. The results indicate that the migration energy of single vacancies in Al is = 0.55 eV.

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