Abstract
Abstract Control over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.
Highlights
Control over individual point defects in solidstate systems is becoming increasingly important, for current semiconductor industries and for generation quantum information science and technologies
To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible
The quantum coherence properties of a variety of solidstate defects were investigated in recent years; principally among them are phosphorus dopants in silicon (Si) [11] and nitrogen-vacancy (NV) centers in diamond [7] with more recent interest in divacancies in silicon carbide (SiC) [8] and defects in two-dimensional hexagonal boron nitride (h-BN) [9]
Summary
As a small sprinkling of spice can drastically change the color and flavor of cuisine, point defects play crucial roles in tuning the electronic properties of semiconductor devices. Full three-dimensional control can be realized through the combination of delta-doping chemical vapor deposition growth (depth control) and localized vacancy creation with 12C implantation or electron irradiation (lateral control) [27, 28]. Despite these wide-ranging efforts, the current state-of-the-art is still limited to a spatial precision of ~10–100 nm [20, 21] with comparably limited control over the NV’s local environment
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