Abstract
The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals. >
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