Abstract
Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ω/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
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