Abstract
We have deposited La2/3Sr1/3MnO3(110) thin films by pulsed laser deposition, changing the ratio of surface diffusivity to deposition flux (D/F) by adjusting substrate temperature and laser repetition rate. We show that persistent two-dimensional layer-by-layer growth, at least up to 30 nm, can be achieved by exploiting diffusion-limited growth (small D/F ratio), giving rise to atomically-flat epitaxial films. The results are of interest in spintronic applications such as tunnel magnetoresistance devices, and the approach presented here can be extended to other functional films of high surface energy.
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