Abstract
AbstractWeak‐field magnetoconductance (MC) caused by the weak localization (WL) in AlxGa1–xAsySb1–y/InAs quantum wells (QWs) has been studied by means of tuning the carrier density n via the positive and negative persistent photoconductivity effects in order to explore the origin of spin‐orbit interaction (SOI). We have found the weak antilocalization (WAL) in extremely weak magnetic fields developing with increasing n. The MC has been fitted by taking account of the spin‐Zeeman effect on the SOI arising from the spin splitting in asymmetric systems. The SO field (Bso) inferred has been found to be almost independent of n, thereby confirming the dominant role of the Rashba field as the cause of SOI in our InAs QWs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
