Abstract
Oxide crystals doped with Ce3+ are useful in areas such as scintillators and passive optical sources. Scintillator materials require high light-yield and fast luminescence decay time. However, when the crystalline quality is degraded by defects created during the crystal growth process, afterglow from the crystals is observed. The persistent phosphorescence observed in Lu2SiO5 doped with Ce3+ ions has been investigated in detail and a model is proposed to explain the mechanism responsible for the phosphorescence.
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