Abstract
We demonstrate that the effective optical band gap of bulk semiconductor CdZnTe:V crystals can be varied and controlled by dual application of light and electric field, both at moderate strengths. When the combined effect of light intensity and applied field exceeds a threshold, the effective band-gap shift persists even after the light is turned off, as long as the electric field is applied. The persistent effective band-gap shift is accompanied by persistent photocurrent and persistent change in the (220) $d$ spacing of crystalline lattice. However, all persistence effects can be reset to their original values when the applied field is turned off.
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