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Abstract
Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single crystals by means of intrinsic tunneling spectroscopy. We are able to controllably and reversibly change the doping state of the same single crystal from underdoped to overdoped state, without changing its chemical composition. It is observed that such physical doping is affecting superconductivity in Bi-2212 similar to chemical doping by oxygen impurities: with overdoping the critical temperature and the superconducting gap decrease, with underdoping the c-axis critical current rapidly decreases due to progressively more incoherent interlayer tunneling and the pseudogap rapidly increases, indicative for the presence of the critical doping point. We distinguish two main mechanisms of persistent electric doping: (i) even in voltage contribution, attributed to a charge transfer effect, and (ii) odd in voltage contribution, attributed to reordering of oxygen impurities.
Highlights
High temperature superconductivity (HTSC) in cuprates occurs as a result of doping of a parent antiferromagnetic Mott insulator and properties of cuprates change significantly with doping
For a given voltage, the latter should scale inversely proportional to the number of junctions in the mesa, i.e., would not be universal for different mesas
We have studied the effect of persistent electric doping on intrinsic tunneling characteristics of small Bi-2212 mesa structures
Summary
High temperature superconductivity (HTSC) in cuprates occurs as a result of doping of a parent antiferromagnetic Mott insulator and properties of cuprates change significantly with doping. Properties of underdoped cuprates are abnormal due to the persistence of the normal state pseudogap, strong superconducting fluctuations, or possibly preformed pairing, [4] and magnetism [5] at T > Tc. There are indications that the transition from the normal to the abnormal behavior occurs abruptly at a critical doping point [1, 6,7,8,9]. There are indications that the transition from the normal to the abnormal behavior occurs abruptly at a critical doping point [1, 6,7,8,9] This may be a consequence of the quantum phase transition a phase transition, which occurs at T = 0, in frustrated systems as a result of a competition of coexisting order parameters. Detailed doping-dependent studies are needed both for understanding the puzzling nature of HTSC in cuprates and for the development of novel HTSC materials
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