Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3**Project supported by the National Natural Science Foundation of China (Grant Nos. 61971024and 51901008), Young Elite Scientist Sponsorship Program by CAST (Grant No. 2017QNRC001), the International Mobility Project (Grant No. B16001), and National Key Technology Program of China (Grant No. 2017ZX01032101). P.K.A. acknowledges support by a grant from the National Science

Abstract

Spin–orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7 ± 0.9 Oe/(109 A/m2)) and a large (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.