Abstract

Perpendicular magnetic anisotropy (PMA) is the mostsignificant characteristic for the development ofnonvolatile magnetic storage systems with superior performance. Hence, we investigate PMA of Co2FeSi (CFS)/Pt structures deposited on amorphous Ta2O5 of high dielectric constant. This design has the potential to be beneficial for low-power voltage-controlled spintronic devices. Strong PMA around ∼ 106 erg/cm3 is noticed in Ta2O5/[CFS/Pt]3 stacks with CFS thickness ranging from 0.6 ∼ 1.0 nm. The interfacial PMA energy density is found to be ∼ 0.63 erg/cm2. The PMA rises in the beginning with increase in number of repetitions (n), reaches a maximum of1.4x106 erg/cm3 at n = 3, and then falls. Pronounced thickness effects of Ta2O5 buffer on magnetic properties are observed. We clearly demonstrate the process of engineering PMA in the CFS/Pt bilayer structures deposited on Ta2O5 dielectric. Our findings might be useful for designing CFS/Pt multilayers on high-K dielectric for low power consumption spintronic devices.

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