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Abstract
A thin FePt film was deposited onto a CrV seed layer at 400°C and showed a high coercivity (~3,400 Oe) and high magnetization (900–1,000 emu/cm3) characteristic of L10 phase. However, the magnetic properties of patterned media fabricated from the film stack were degraded due to the Ar-ion bombardment. We employed a deposition-last process, in which FePt film deposited at room temperature underwent lift-off and post-annealing processes, to avoid the exposure of FePt to Ar plasma. A patterned medium with 100-nm nano-columns showed an out-of-plane coercivity fivefold larger than its in-plane counterpart and a remanent magnetization comparable to saturation magnetization in the out-of-plane direction, indicating a high perpendicular anisotropy. These results demonstrate the high perpendicular anisotropy in FePt patterned media using a Cr-based compound seed layer for the first time and suggest that ultra-high-density magnetic recording media can be achieved using this optimized top-down approach.
Highlights
Conventional planar magnetic recording methods have been facing difficulties in reducing the thickness of a magnetic film and the average grain size in it, which is required for the high bit density [1,2]
The well-defined columnar grains of the CrV layer was found to induce perpendicularly oriented grains in a thin FePt overlayer, which resulted in L10 FePt film at a moderate temperature [20]
Recollecting that the coercivity and Mr/Ms ratio are more structure-sensitive than the saturation magnetization, these results suggest that the chemically ordered FCT structure was destroyed and replaced by the chemically disordered FCC structure at least partially during inductively coupled plasma (ICP) Ar etching
Summary
Conventional planar magnetic recording methods have been facing difficulties in reducing the thickness of a magnetic film and the average grain size in it, which is required for the high bit density [1,2]. To realize the very fine patterned media, a proper material stack and welloptimized fabrication process should be chosen to retain the magnetization in the perpendicular direction with a high perpendicular anisotropy (Ku).
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