Abstract
In this paper, the effect of interlayer voltage V on the bandgap and density of state (DoS) and carrier concentration is analysed using a new analytical approach. We begin by modelling of the DoS followed by carrier concentration as a function V . In addition, we model the carrier concentration in degenerate and non-degenerate regimes and the effect of V on them is studied. It is found that as V increases, carrier concentration and bandgap increase too. In addition, we realized that there is a saturation point in profile of bangap respect to V , which is calculated in this paper.
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