Abstract
In an effort to achieve a high data storage density media, Co-Eu-EuS and Co-Eu-Tb-EuS thin films were prepared by RF sputtering. These samples show strong perpendicular anisotropy and high coercivity fields which are required for high data storage density MO media. The compensation temperatures were raised to room temperature making them more useful in MO applications. Exchange coupled EuS which has a giant Kerr rotation (6/spl deg/) at short wavelength (1.8 eV) may help to raise the Kerr rotation at short wavelength in these films.
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