Abstract

Perovskite-based tandem solar cells are promising candidates for industrial applications. This study demonstrated perovskite/silicon tandem devices based on a conventional Si homojunction device configuration employing a tunnel oxide passivating contact to improve the voltage. Moreover, we fabricated it without the deposition of a recombination layer on a large area while showing the possibility of applying the industry market. This solar cell exhibited a power conversion efficiency of 17.3% and a high voltage of 1783 mV on a 25 cm2 active area.

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