Abstract
Perovskite quantum dots (PQDs) are promising in the field of light-emitting diodes (LEDs) due to their adjustable band gap, high photoluminescence quantum yield, and high color purity. However, ion migration is prone to occur in the device due to the structural instability of PQDs, resulting in the degradation of external quantum efficiency. In this work, we proposed a strategy to realize a perovskite quantum dot light-emitting memcapacitor (PQLEM) so as to enhance the electroluminescent performance of PQDs. By varying the pre-bias voltage and time, the ion distribution and trap density in the PQD film could be modified, thereby affecting the capacitance value and luminous efficiency of the device. Under the memcapacitive effect, the external quantum efficiency (EQE) of the device increases from an initial 2.81 to 7.95%. This work provides a route for achieving perovskite quantum dot light-emitting devices with high luminous efficiency.
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