Perovskite QDs embedded in polymer as a wavelength-shifting layer for UV-sensitized silicon sensors

Abstract

Detection of UV radiation is becoming increasingly important for many applications. Here we present novel UV sensor construction on the basis of standard Si detector modification. Wavelength shifting mechanism is achieved by the luminescence effect of perovskite quantum dots embedded in polymer layers. We comprehensively characterize these composite materials, various sensor modification routes and the optical properties of UV-enhanced visible sensors. Modified S1227-16 BG silicon photodiodes and S13360-1375 CS MPPC photodetectors with the enhanced UV response are successively manufactured.