Abstract
With the rapid development of millimeter wave technology, it is a fundamental requirement to understand the permittivity of materials in this frequency range. This paper describes the dielectric measurement of undoped silicon in the E-band (60–90 GHz) using a free-space quasi-optical system. This system is capable of creating local plane wave, which is desirable for dielectric measurement in the millimeter wave range. Details of the design and performance of the quasi-optical system are presented. The principle of dielectric measurement and retrieval process are described incorporating the theories of wave propagation and scattering parameters. Measured results of a sheet of undoped silicon are in agreement with the published results in the literature, within a discrepancy of 1%. It is also observed that silicon has a small temperature coefficient for permittivity. This work is helpful for understanding the dielectric property of silicon in the millimeter wave range. The method is applicable to other electronic materials as well as liquid samples.
Highlights
Dielectric permittivity plays a fundamental role in describing the interaction of electromagnetic waves with matter
The processes of link budget, channel characterization, and multi-path effect are representative examples of wave interaction with media [1]. Understanding these phenomena is a fundamental requirement in communication system design
With the rising of millimeter wave technology, for example, 5G communication [2], millimeter wave radar and sensing [3], accurate characterization of electronic materials for these applications is of fundamental significance
Summary
Dielectric permittivity plays a fundamental role in describing the interaction of electromagnetic waves with matter. An extensive investigation was conducted by Krupka and his colleagues [12,13,14,15,16] These measurements used resonator techniques at various frequency ranges below 50 GHz. It was demonstrated that the loss tangent decreased with increasing frequency, and in most cases on the order of 10−4. The real part showed very stable properties over the investigated frequency and temperature ranges, in the worst case in the range of 11.46–11.71 These findings provide valuable reference to the permittivity of silicon. In these studies the E-band is covered in [12], where it was stated that the refractive index decreased linearly with frequency. The remaining parts are organized as follows: Section 2 is devoted to a general description on the permittivity and measurement techniques; Section 3 describes the method generating a quasi-plane wave; Section 4 is the retrieval method and Section 5 is the measurement results; the last part Section 6 concludes this work
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
