Abstract
Boron−nitrogen doped multiple resonance (BN-MR) emitters, characterized by B−N covalent bonds, offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency. However, there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters. Herein, we present the synthesis of a BN-MR emitter, tCz[B−N]N, through a one-pot borylation reaction directed by the amine group, achieving an impressive yield of 94%. The emitter is decorated by incorporating two 3,6-di-t-butylcarbazole (tCz) units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations. This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region, peaking at 526 nm with a narrowband full-width at half maximum (FWHM) of 41 nm. Consequently, organic light emitting diodes (OLEDs) employing this emitter achieved a maximum external quantum efficiency (EQEmax) value of 27.7%, with minimal efficiency roll-off. Even at a practical luminance of 1000 cd∙m−2, the device maintains a high EQE value of 24.6%.
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