Abstract
In this paper the low temperature (4.2 ≤ T ≤ 35 K) behaviour of MOSFET’s with channel lengths down to 30 nm is analysed. Unexpected periodic transconductance oscillations are found in the drain current (Id) versus gate voltage (Vg) characteristics. Transconductance oscillations are present both for pMOS and nMOS devices. The drain current versus drain voltage characteristics of nMOSFET’s indicates anomalous conductance fluctuations, too.
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