Abstract
We investigated guided mode extraction in organic light-emitting diodes and compare the experimental findings to transfer matrix (T-matrix) and finite difference time domain (FDTD) simulations. To this end, we patterned the indium tin oxide anode with Bragg gratings with lattice constants from 300 to 600 nm and varied the depth of the grating structures. The structuring was done by laser interference lithography and plasma etching. Both techniques allow for a rapid large area processing. We measured angle resolved electroluminescent spectra of the nanostructured devices and reference devices. To obtain the mode distribution in the devices we made use of T-matrix simulations. In addition we performed FDTD simulations of the emission characteristics of the patterned devices. The simulations are in agreement with our experimental findings and give insight into the outcoupling mechanisms.
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