Abstract
The formation of periodic arrays of intramolecular junctions in silicon nanowires from a single growth process is reported. Scanning tunneling microscopic images show intramolecular junctions formed by fusing together two straight wire segments (∼3 nm in diameter) 5 and 10 nm long, respectively, at an angle of ∼30° with respect to each other. The junction repeats itself in a regular pattern along a nanowire, forming a striking superlattice ∼3 nm in diameter and at least several microns long. Scanning tunneling spectroscopic measurements reveal distinctly different current–voltage curves for the two different segments changing sharply across each junction. The segments are most probably formed by a periodic change of growth direction while the different electronic properties of the two segments forming the junction are attributed to the differences in surface structure and segment diameter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
