Perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN high-electron mobility transistors

Abstract

Perhydropolysilazane spin-on-dielectric (SOD) is examined as a SiOx buffer for the plasma-enhanced CVD (PECVD) Si3N4 passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Compared to HEMTs passivated by the conventional PECVD Si3N4, the SOD-buffered structure shows about two times greater saturation drain current. From the modified charge control model and Silvaco device simulation, it is proposed that this ehancement is due to the minimised plasma-induced surface states in the SOD-buffered structure compared to a high density (∼5×1012/cm2) of negatively charged states in the PECVD Si3N4 passivation structure.