Abstract
A rectangular dual-axis large area position sensitive detector (PSD), with 5 cm X 5 cm detection area, has been developed by using a hydrogenated amorphous silicon (a-Si:H) PIN photodiode produced by plasma enhanced chemical vapor deposition (PECVD). The requirements needed for the fabrication of these devices are the thickness uniformity of the different layers, the geometry, and the contacts location. In this paper we present results on PSD with special emphasis on the linearity as well as on its response time.
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