Abstract
This work reports on the improved performance of planar GaAs and InGaAs Schottky diodes fabricated by rare element Pr related oxides Pr 2O 3-added liquid phase epitaxy. We verify that impurity concentrations are suppressed by two orders, and that electron mobility is significantly enhanced. With Pr 2O 3 added, the cutoff frequency of Schottky diodes increases in planar InGaAs but decreases in planar GaAs, because of higher contact resistance.
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