Performances of highly irradiated 3d and planar pixel sensors interconnected to the RD53A readout chip

Abstract

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new highly radiation tolerant silicon pixel sensors, capable of withstanding fluences up to 2.3 × 1016 neq/cm2 (1 MeV equivalent neutrons). In this paper results obtained in beam test experiments with 3D and planar pixel sensors interconnected with the RD53A readout chip are reported. RD53A is the first prototype in 65 nm technology issued by the RD53 collaboration for the future readout chip to be used in the upgraded pixel detectors. The interconnected modules have been tested in an electron beam at DESY, before and after irradiation, which was performed at the CERN IRRAD facility for the 3D sensors or at the KIT Irradiation Center for the planar sensors, up to an equivalent fluence of 1 × 1016 neq/cm2. The sensors were made by FBK foundry in Trento, Italy, and their development was done in collaboration with INFN (Istituto Nazionale di Fisica Nucleare, Italy). The analysis of the collected data shows hit detection efficiencies around 99% measured after irradiation. All results are obtained in the framework of the CMS R&D activities.