Abstract
This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the Eff of p-p’-i-n is 9.60% (VOC = 936.6 mV, JSC = 13.86 mA/cm2, FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 1017 particles/cm3, 1.0 x 1019 particles/cm3, 1.80 eV, and 600 nm, respectively.
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