Abstract
In recent years, several groups have experimentally demonstrated both n-channel and p-channel 4H-SiC IGBTs for ultra-high voltage applications. In this paper, numerical simulations have been used to quantify the on-state and switching performance tradeoffs for UHV n- and p-IGBTs with non-punch-through and field-stop design. The smaller gain of the wide base transistor in an n-IGBT leads to faster stored charge removal during turn-off, which leads to lower switching losses. Additionally, the lower current gain also improves the ruggedness of n-IGBTs as compared to p-IGBTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
