Abstract
The aim of this study is to get the photon energy suitable for different thickness detector, different photon energy acts on pixel CdZnTe detector of different thickness. We can obtain the energy spectrum estimation, energy resolution and peak efficiency by the experiment and simulation with the radiation source of 241Am and 137Cs acting on pixel CdZnTe detector. From experiment results, it can be found that at the high energy of 662 keV the thicker the CdZnTe detector is, the higher the energy resolution and peak efficiency is while at the low energy of 59.5 keV tailing increases and charge is loss. It also can be found the characteristic of detector is better at the low energy when the detector thickness is thinner.
Highlights
In recent years, with the innovation of crystal growth technology and equipment manufacturing technology, the interest for the room temperature semiconductor of high atomic number Z is rising (Li et al, 2005; Zha et al, 2008; Washington II et al, 2010)
The objective of the study is to get the photon energy suitable for different thickness detector, different photon energy acts on pixel CdZnTe detector of different thickness by the experiment and simulation using the radiation source of 241Am and 137Cs acting on pixel CdZnTe detector
Pixel CdZnTe detectors of different thickness was tested in the experiment
Summary
With the innovation of crystal growth technology and equipment manufacturing technology, the interest for the room temperature semiconductor of high atomic number Z is rising (Li et al, 2005; Zha et al, 2008; Washington II et al, 2010) In these semiconductor materials, CdZnTe material is considered to be suitable for making X-ray and gamma-ray detector. With a high atomic number (Zmax = 52), high-density (ρ = 5.76 g d cm of) and a wide band gap (Eg~1.6eV) and CdZnTe detector has a high quantum efficiency, good roomtemperature characteristics and high stopping power for X-ray and the gamma-ray Based on these advantages, it is feasible to use CdZnTe detector at the situations of multispectral and low-flow (Szeles, 2004; Sordo et al, 2009). This feature limits the thickness of the detector, the energy range for using the detectors is greatly reducing
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