Abstract
This study investigates the performance of infrared photodetectors through variable temperature tests, specifically examining dark current, light current, and capacitance. The reduction of dark current and the increase in carrier lifetimes are crucial for enabling the utilization of infrared photodetectors in complex environments. By conducting tests and analyses on high-performance detectors, the physical mechanisms governing carrier transport processes can be obtained. In order to elucidate the characteristics of InAs/GaSb/AlSb type-II superlattices, a short-wave infrared (SWIR) photodetector exhibiting low dark current and low saturation bias voltage is designed and fabricated.
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