Abstract
InAs/GaAs quantum dots (QDs) with graded In x Ga 1 − x As strained-reducing layer (SRL) are grown by metal-organic chemical vapor deposition, the effects of Indium (In) composition and thickness in In x Ga 1 − x As on QD morphological characteristics and optical properties are investigated. Compared with In x Ga 1 − x As SRL with fixed In content, gradient In x Ga 1 − x As SRL can further improve the growth quality of InAs QDs, enhance luminescence intensity and extend emission spectrum toward longer wavelength.
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